학술논문
GaAs/AlGaAs surface emitting laser diode with vertical distributed feedback optical cavity and transverse junction buried heterostructure
Document Type
Conference
Author
Source
1987 International Electron Devices Meeting IEDM Tech. Dig. Electron Devices Meeting, 1987 International. :792-795 1987
Subject
Language
Abstract
A threshold current of 2 mA at room temperature CW operation is realized in a vertical distributed feedback surface emitting laser diode (VDFB-SELD) with transverse junction buried heterostructure (TJBH). In this TJBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded by N- and P-type AlGaAs cladding layer for minority carrier confinement. The far field angle is 7 to 8 degrees. The beam shape is nearly circular. However, the lasing spectrum is broad ( 1.5 to 3 nm) compared with the conventional edge-emitting laser. Theoretical model of the VDFB-SELD-TJBH by using DFB theory and its computer simulation of the spectrum shows good agreement with the experimental measurements.