학술논문

A new dual-GCT structure with short transparent anode and corrugated p base region
Document Type
Conference
Source
2015 IEEE 2nd International Future Energy Electronics Conference (IFEEC) Future Energy Electronics Conference (IFEEC), 2015 IEEE 2nd International. :1-4 Nov, 2015
Subject
Power, Energy and Industry Applications
Anodes
Charge carrier lifetime
Switches
Temperature
Current density
Thyristors
Transistors
Gate Commutated thyristor
corrugated p base region
transparent anode
short anode
high temperature
Language
Abstract
A new dual chip GCT (Dual-GCT) structure with short transparent anode and corrugated p base region is presented based on a traditional Dual-GCT in this paper. The structural features and operation principle of the new device are analyzed, and the characteristics are studied by ISE simulator. Influences of high temperature on the characteristics are discussed. The research results that the new device has better high temperature blocking and conducting characteristics due to corrugated p base region, and better turn-off characteristics due to short transparent anode compared with the traditional Dual-GCT.