학술논문
Short-circuit capability in p-GaN HEMTs and GaN MISHEMTs
Document Type
Conference
Author
Source
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Power Semiconductor Devices and IC's (ISPSD), 2017 29th International Symposium on. :455-458 May, 2017
Subject
Language
ISSN
1946-0201
Abstract
Gallium Nitride (GaN) Enhancement-mode High-Electron-Mobility Transistors (EHEMTs) are promising devices for motor drives. Hence, ensuring and gaining insight into their ruggedness against Short-Circuit (SC) faults become essential. Thus, SC stresses (types I and II) are studied for the first time in commercial EHEMTs with similar on-state resistance (∼ 100 mΩ) and breakdown voltage (∼ 600 V). As SC failure mechanisms, thermal (SC I) and dielectric (SC II) breakdown are identified.