학술논문
Failure analysis of laser diodes using transmission electron microscopy
Document Type
Conference
Author
Source
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on. :511-514 2004
Subject
Language
ISSN
1092-8669
Abstract
We carried out failure analysis of InGaAsP/InP buried hetero-structure laser diodes using transmission electron microscopy. Climb motion of dislocation half loops in a regrowth layer caused rapid degradation. Generations of dislocation micro-loops at regrown interfaces gradually reduced output power for long periods of operation. In a suddenly failed laser chip, we observed a melt mark elongated from a crack crossing an active layer.