학술논문
Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal
Document Type
Conference
Author
Source
2017 IEEE International Interconnect Technology Conference (IITC) Interconnect Technology Conference (IITC), 2017 IEEE International. :1-3 May, 2017
Subject
Language
ISSN
2380-6338
Abstract
We report on Atomic Layer Deposition Titanium (ALD Ti) for FinFET source/drain contact applications. On planar test structures, we accurately benchmark contact resistivity (ρc) of ALD Ti, ∼1.4×10–9 Ω·cm 2 on Si:P and ∼2.0×10–9 Ω·cm 2 on SiGe:B, among to lowest reported values in literature. Ultralow ρc is resulting from enhanced Ti/Si(Ge) reactivity originating in the ALD process. We also demonstrate capability of this process to significantly lower Rc on FinFETs by allowing a lateral contact into the S/D area effectively maximizing the contacting area.