학술논문
Radiation Characterization of a Backside-Illuminated P-Type Photo-MOS Pixel With Gamma Rays and Fusion-Induced Neutrons
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 69(3):534-541 Mar, 2022
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
We report on the radiation response of a novel p-type photogate pixel. Sensors are exposed to gamma rays, and fusion neutrons during deuterium plasma operation at W–Tungsten–Environment in Steady-state Tokamak (WEST), showing dark current increase with total dose.