학술논문
3-Tier BSI CIS with 3D Sequential & Hybrid Bonding Enabling a1.4um pitch,106dB HDR Flicker Free Pixel
Document Type
Conference
Author
Guyader, F.; Batude, P.; Malinge, P.; Vire, E.; Lacord, J.; Jourdon, J.; Poulet, J.; Gay, L.; Ponthenier, F.; Joblot, S.; Farcy, A.; Brunet, L.; Albouy, A.; Theodorou, C.; Ribotta, M.; Bosch, D.; Ollier, E.; Muller, D.; Neyens, M.; Jeanjean, D.; Ferrotti, T.; Mortini, E.; Mattei, J.G.; Inard, A.; Fillon, R.; Lalanne, F.; Roy, F.; Josse, E.
Source
2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :37.4.1-37.4.4 Dec, 2022
Subject
Language
ISSN
2156-017X
Abstract
This paper demonstrates a 3-tier CMOS image sensor combining 3D Sequential Integration (3DSI) for the 2tier pixel realization & Hybrid Bonding (HB) for the logic circuitry connection. The pixel transistors are fabricated sequentially above the photogate through innovative thin SOI device technology offering scalability advantages versus its bulk counterpart. The demonstrated 3DSI pixel with dual carrier collection offers an attractive dynamic range (106dB, Single Exposure) versus pixel pitch $(1,4 \mu \mathrm{m})$ trade-off.