학술논문
Porphyrin induced changes in charge transport of graphene FET
Document Type
Conference
Author
Source
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO) Nanotechnology (IEEE-NANO), 2016 IEEE 16th International Conference on. :483-486 Aug, 2016
Subject
Language
Abstract
The transport properties of back-gated graphene field effect transistors (GFETs) can be tuned via chemical doping. In this study, we report alteration of charge transport properties of GFET via 5-(4-hydroxyphenyl)-10,15,20-tri-(p-tolyl) zinc(II) porphyrin (Zn(II)-TTPOH) and its free base counterpart. We propose that, the porphyrin induces p - type doping in graphene.