학술논문
First Demonstration of Si Superjunction BJT with Ultra-High Current Gain and Low ON-resistance
Document Type
Conference
Source
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium on. :451-454 Sep, 2020
Subject
Language
ISSN
1946-0201
Abstract
A 650-V, 10-A Si-superjunction bipolar transistor (Si-SJBJT), has been experimentally demonstrated for the first time. The fabricated SJBJT has a h FE of more than 200 at a J C of less than 10 A/cm 2 for a V CE of 0.2 V and even at a J C of more than 100 A/cm 2 for a V CE of 2.0 V, which is superior to commercial Si-bipolar transistors. The specific ON-resistance of the SJBJT is 4.1 m $\omega$ cm 2 for an h FE of 11.0 and 2.2 m $\omega cm^{2}$ for an h FE of 7.0. The turn-off behavior of the SJBJT has a 2.3 $\mu$s storage time similar to conventional BJTs, whereas the tail current of the SJBJT is smaller than that of the BJTs, owing to the quick extraction of the stored carriers near the drain region by the SJ structure. The high current driving capability of the SJBJT achieves a turn-on time less than that of the BJTs.