학술논문

An Analytical Model for Cylindrical Thin-Film Transistors
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 54(9):2362-2368 Sep, 2007
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Thin film transistors
Insulators
Logic gates
Geometry
Threshold voltage
Organic thin film transistors
Analytical models
Cylindrical field-effect transistor (FET)
e-textile
organic thin-film transistor (OTFT)
pentacene
Language
ISSN
0018-9383
1557-9646
Abstract
In this paper, we propose an analytical model for the electrical behavior of cylindrical thin-film transistors. A comparative analysis with planar devices is carried on, focusing on the dimension of the layers composing the device to determine major differences between the two geometries. Finally, the model is validated with experimental results.