학술논문
Novel technique for evaluation of optical confinement in semiconductor lasing structures through spatially and spectrally resolved emission spectra
Document Type
Conference
Author
Source
Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013) Lasers and electro-optics 99 Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on. :145 1999
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Language
Abstract
Summary form only given. At present, the main focus of III-V nitride research is the optimization of current-injected laser diodes in order to achieve a low lasing threshold and extend the lifetime of working devices. Whereas a significant amount of work has been dedicated to such issues as the choice of substrate, facet formation, measurement of far-field emission patterns, as well as the study of temperature effects on lasing characteristics, the subject of optical confinement has not been adequately addressed. In this work we introduce a novel technique for investigation of optical confinement in GaN-based lasing structures, which utilizes both high spatial and spectral resolution of sample emission.