학술논문

The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 47(7):1330-1333 Jul, 2000
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Zinc compounds
Language
ISSN
0018-9383
1557-9646
Abstract
The reliable n/sup +/-ZnSSe metal-semiconductor-metal (MSM) blue-green light emitting diodes (LED's) have been fabricated. The contact metal was CuGe/Pt/Au. The current transport mechanisms agree very well with the back to back tunneling diodes. The kink phenomena were observed in the MSM current-voltage curves. In the metal-semiconductor interface, the element Zn in ZnSSe can be replaced by Cu results in some acceptor levels as radiative recombination centers in the MS interface. The peak wavelength in the LED electroluminescent (EL) spectra was strongly dependent on the injection currents from 5 to 40 mA. The peak wavelength and full width at half maximum are 510 and 10 nm, respectively, at 10 mA injection current. When the injection current increases to 15 mA, the peak wavelength shifted to 530 nm due to different recombination centers. Further increasing the injection currents, the peak wavelength shifted slightly to the long wavelength side.