학술논문

Modeling and synthesis of molecular memory
Document Type
Conference
Source
2015 19th International Symposium on VLSI Design and Test VLSI Design and Test (VDAT), 2015 19th International Symposium on. :1-2 Jun, 2015
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Signal Processing and Analysis
Solid modeling
Nanoscale devices
Integrated circuit modeling
Nanoparticles
Reliability
Switches
Computational modeling
Nanoscale
memory
molecular device
nanocell
molecules
uncertainty
transient errors
Language
Abstract
Performance and reliability of nanoscale memory and logic devices is determined by few electron-phenomena. In this context, the organic molecules may offer some advantages for future memory applications. Since, a molecule is the smallest component whose electrical properties can be engineered, it can be argued that the ultimate integrated circuit will be constructed at the molecular level. This fact has been the driving force behind molecular electronics research of recent times. This article investigates the aspects of modeling, synthesis and analysis of nanocell based molecular memory. In our work, we have developed the HSPICE as well as probabilistic models for nanocell based molecular memory. An attempt has been made to develop a CAD tool for synthesis of such molecular memories which are posing interesting and promising research challenges at futuristic cutting edge of technology spectrum.