학술논문
Low-threshold grating-coupled surface-emitting lasers with etch-stop layer for precise grating positioning
Document Type
Periodical
Author
Source
IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 5(10):1149-1152 Oct, 1993
Subject
Language
ISSN
1041-1135
1941-0174
1941-0174
Abstract
The authors discuss the operation of InGaAs/AlGaAs grating-coupled surface-emitting lasers with threshold-current densities as low as 118 A/cm/sup 2/, to the best of our knowledge the lowest reported for a surface emitter. The low threshold-current density is the result of high reflectivity and low absorption gratings in conjunction with a lateral effective refractive index step in the gain section. The gratings were fabricated using electron-beam lithography and chemically assisted ion-beam etching, producing uniform rectangular gratings. A thin etch-stop layer incorporated in the epitaxial structure made it possible to combine precise control of the grating position with a strained-layer SQW-GRINSCH structure for optimum low-threshold currents.ETX