학술논문

An SOI-Based 7.5/spl mu/m-Thick 0.15x0.15mm2 RFID Chip
Document Type
Conference
Source
2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International. :1191-1200 2006
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Radiofrequency identification
Circuits
Read only memory
Capacitors
Electrodes
Rectifiers
Schottky diodes
Silicon on insulator technology
Clocks
Costs
Language
ISSN
0193-6530
2376-8606
Abstract
A 0.15 X 0.15mm 2 RFID chip containing a 128b ROM is fabricated in a 0.18μm 4M SOI CMOS technology. It achieves 480mm read range with a 2.45GHz carrier for a reader output power of 300mW. The chip is thinned precisely by using an SOI buried oxide layer structure as an etch stop. An RFID antenna is connected to the chip by using a double-surface electrode