학술논문

10kV Trench Gate IGBTs on 4H-SiC

Document Type

Conference

Author

Zhang, Q.; Chang, H.-R.; Gomez, M.; Bui, C.; Hanna, E.; Higgins, J.A.; Isaacs-Smith, T.; Williams, J.R.

Source

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Power semiconductor devices & ICs Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on. :303-306 2005

Subject

Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Insulated gate bipolar transistors
Voltage
Silicon carbide
Thyristors
Switching frequency
Topology
Inverters
Semiconductor devices
Fabrication
Power systems

Language

ISSN

1063-6854
1946-0201

Online Access

Full Text (IEEE) Find it@PNU

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