학술논문
AES study of thermally treated GeO/sub 2//(111)GaAs structures
Document Type
Conference
Author
Source
2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547) Semiconductor conference Semiconductor Conference, 2001. CAS 2001 Proceedings. International. 2:327-330 vol.2 2001
Subject
Language
Abstract
Auger electron spectroscopy (AES) was used to study the solid phase surface reactions and Ge diffusion process during the thermal treatment (500-750/spl deg/C) of GeO/sub 2//(111)GaAs structures. Different results were obtained for the A and B surfaces of (111)GaAs. The diffusivity data for A and B surfaces could be described by the following Arrhenius expressions: A-D(cm/sup 2/ s/sup -1/)=1.16/spl times/10/sup 2/ exp(-3.54/kT); B-D(cm/sup 2/ s/sup -1/)=2.16/spl times/10/sup -5/ exp(-2.12/kT).