학술논문
MOSFET process optimization and characteristics extraction
Document Type
Conference
Author
Source
2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748) Semiconductor conference Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International. 2:319-322 vol.2 2004
Subject
Language
Abstract
TCAD software needs equipment input settings and models to create the process environment for process and device simulation tools like TSUPREM4 and MEDICI. After optimisation the next step is the circuit simulation and design using software packages like SPICE. First using design of experiments-DOE and response surface modelling-RSM techniques we optimise the MOSFET characteristics and then we compare the transfer characteristics of n-type MOSFET, biased in the linear region, and obtained from package respectively TSUPREM4 and MEDICI with transfer characteristics from PSPICE. Using the PSPICE second level model for MOS transistor we obtain a good fit with MEDICI transfer characteristics.