학술논문
An 80V class Silicon Lateral Trench Power MOSFET for High Frequency Switching Applications
Document Type
Conference
Author
Source
2008 20th International Symposium on Power Semiconductor Devices and IC's Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on. :119-122 May, 2008
Subject
Language
ISSN
1063-6854
1946-0201
1946-0201
Abstract
An 80V class integrable lateral trench power MOSFET based on a shallow trench (~1.0μm) structure with a low Figure of Merit (R on ×Q g ) for high frequency switching applications is presented. A simulated optimized MOSFET exhibits a Figure of Merit of 240 mOhm-nC, which is over 2.5X improvement on the best reported lateral trench power MOSFETs in the same voltage class. Prototype devices from the first silicon run exhibit a threshold voltage of 1V, specific on-resistance of 3.05 mOhm-cm 2 , breakdown voltage of 55V and Figure of Merit of 645 mOhm-nC at a gate bias of 10V.