학술논문

High-Efficiency Bias Stabilization for Resonant Tunneling Diode Oscillators
Document Type
Periodical
Source
IEEE Transactions on Microwave Theory and Techniques IEEE Trans. Microwave Theory Techn. Microwave Theory and Techniques, IEEE Transactions on. 67(8):3449-3454 Aug, 2019
Subject
Fields, Waves and Electromagnetics
Oscillators
Resistance
Epitaxial growth
Transmission line measurements
Wireless communication
Resistors
Schottky diodes
Bias stabilization
high-frequency oscillators
negative differential resistance (NDR)
resonant tunneling diode (RTD)
Language
ISSN
0018-9480
1557-9670
Abstract
We report on high-efficiency, high-power, and low-phase-noise resonant tunneling diode (RTD) oscillators operating at around 30 GHz. By employing a bias stabilization network, which does not draw any direct current (dc), the oscillators exhibit over a tenfold improvement in the dc-to-RF conversion efficiency (of up to 14.7%) compared to conventional designs (~0.9%). The oscillators provide a high maximum output power of around 2 dBm, and low phase noise of −100 and −113 dBc/Hz at 100 kHz and 1 MHz offset frequencies, respectively. The proposed approach will be invaluable for realizing very high efficiency, low phase noise, and high-power millimeter-wave (mm-wave) and terahertz (THz) RTD-based sources.