학술논문
50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics
Document Type
Conference
Author
Hergenrother, J.M.; Wilk, G.D.; Nigam, T.; Klemens, F.P.; Monroe, D.; Silverman, P.J.; Sorsch, T.W.; Busch, B.; Green, M.L.; Baker, M.R.; Boone, T.; Bude, M.K.; Ciampa, N.A.; Ferry, E.J.; Fiory, A.T.; Hillenius, S.J.; Jacobson, D.C.; Johnson, R.W.; Kalavade, P.; Keller, R.; King, C.A.; Kornblit, A.; Krautter, H.W.; Lee, J.T.-C.; Mansfield, W.M.; Miner, J.F.; Morris, M.D.; Oh, S.-H.; Rosamilia, J.M.; Sapjeta, B.J.; Short, K.; Steiner, K.; Muller, D.A.; Voyles, P.M.; Grazul, J.L.; Shero, E.; Givens, M.E.; Pomarede, C.; Mazanec, M.; Werkhoven, C.
Source
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Electron devices meeting 2001 Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International. :3.1.1-3.1.4 2001
Subject
Language
Abstract
We have integrated HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics grown by atomic layer chemical vapor deposition (ALD) with poly-Si gate electrodes in the vertical replacement-gate (VRG) MOSFET geometry. These transistors are among the first reported with ALD HfO/sub 2/ gate dielectrics, and have HfO/sub 2/ target equivalent oxide thicknesses (tEOT's) down to 13 /spl Aring/. The poly-crystalline HfO/sub 2/ films in these VRG nMOSFETs exhibit extremely low gate leakage (GL) current densities of J/sub G/ /spl sim/ 10/sup -7/ A/cm/sup 2/ at V/sub G/-V/sub T,Long/ = 0.6 V for 15 /spl Aring/ tEOT devices. This indicates that amorphous gate dielectrics may not be necessary to meet GL requirements. HfO/sub 2/ devices with 50 nm gate length L/sub G/ exhibit drive currents [normalized by the coded width W/sub C/] of 490 /spl mu/A//spl mu/m for 1 V operation (overdrive V/sub GS/-V/sub T/ = 0.6 V) with good short-channel performance. These results demonstrate that ALD is compatible with the demanding VRG geometry, thereby illustrating that it should be well-suited to essentially any novel device structure built with Si-compatible materials.