학술논문
Measuring 1 MeV (Si) equivalent neutron fluences with PIN silicon diodes
Document Type
Conference
Author
Source
RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3) Radiation and its effects on components and systems Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on. :20-26 1993
Subject
Language
Abstract
Damages created in a PIN diode by fast neutrons are evaluated by measuring the variation of the resistivity of the diode under a given current. Calibrations are performed with different neutron sources. Neutron fluences are measured by diode voltage.ETX