학술논문

Simultaneous extraction of thermal and emitter series resistances in bipolar transistors
Document Type
Conference
Source
Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting Bipolar/BiCMOS circuits and technology Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the. :170-173 1997
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Thermal resistance
Data mining
Bipolar transistors
Numerical simulation
Lattices
Heating
Electrical resistance measurement
Silicon germanium
Germanium silicon alloys
Heterojunctions
Language
ISSN
1088-9299
Abstract
This paper describes a new method for simultaneous extraction of emitter and thermal resistance in bipolar transistors. The approach is verified using data generated by a compact model including self-heating and numerical simulation with lattice heating. Measured results are presented for the emitter and thermal resistances of self-aligned polysilicon devices and SiGe heterojunction devices.