학술논문
Auger Recombination in Monolithic Dual-Wavelength InGaN Light-Emitting Diodes
Document Type
Periodical
Source
Journal of Display Technology J. Display Technol. Display Technology, Journal of. 12(11):1398-1402 Nov, 2016
Subject
Language
ISSN
1551-319X
1558-9323
1558-9323
Abstract
Auger recombination of dual-wavelength emission in monolithic InGaN light-emitting diodes (LEDs) is numerically investigated. Simulation results show that effective suppression of Auger recombination plays an important role toward the realization of dual-wavelength emission in InGaN LEDs. With appropriate design, the carriers in active region can be spatially and spectrally balanced and thereby effective dual-wavelength emission can be achieved.