학술논문
Pass transistor driving RC loads in nanoscale technologies
Document Type
Conference
Author
Source
2012 16th IEEE Mediterranean Electrotechnical Conference Electrotechnical Conference (MELECON), 2012 16th IEEE Mediterranean. :76-79 Mar, 2012
Subject
Language
ISSN
2158-8473
2158-8481
2158-8481
Abstract
In this paper the operation of the pass transistor driving RC loads is investigated for nanoscale technologies. The widely accepted CRC π-model is used for the representation of RC loads. The different operational conditions of the circuit are determined and the differential equations which describe its operation are solved analytically. Appropriate approximations are used for the current waveforms to simplify the modeling procedure without significant influence in the accuracy. The evaluation of the model is made through comparisons with HSpice simulation results and by using three different technologies: CMOS 65 nm, 32nm and 32 nm with high-k dielectric.