학술논문

Machine Vision With InP Based Floating-Gate Photo-Field-Effective Transistors for Color-Mixed Image Recognition
Document Type
Periodical
Source
IEEE Journal of Quantum Electronics IEEE J. Quantum Electron. Quantum Electronics, IEEE Journal of. 58(4):1-7 Aug, 2022
Subject
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Indium phosphide
Logic gates
III-V semiconductor materials
Optical pulses
Optical imaging
Machine vision
Dielectrics
optical neural network
phototransistors
indium phosphide
Language
ISSN
0018-9197
1558-1713
Abstract
The success of artificial neural networks (ANNs) in machine vision techniques has driven hardware researchers to explore more efficient computing elements for energy-expensive operations such as vector-matrix multiplication (VMM). In this work, InP-based floating-gate photo-field-effective transistors (FG-PFETs) are demonstrated as computing elements that integrate both photodetection and initial signal processing at the sensor level. These devices are fabricated from semiconductor channels grown via a back-end CMOS compatible templated-liquid phase (TLP) approach. Individual devices are shown to exhibit programmable responsivity, mimicking the effect of a synapse connecting the photodetector to a neuron. Using these devices, a simulated optical neural network (ONN) where the experimentally measured performance of FG-PFETs is used as an input shows excellent image recognition accuracy for color-mixed handwritten digits.