학술논문

Optimization metrics for Phase Change Memory (PCM) cell architectures
Document Type
Conference
Source
2014 IEEE International Electron Devices Meeting Electron Devices Meeting (IEDM), 2014 IEEE International. :29.1.1-29.1.4 Dec, 2014
Subject
Components, Circuits, Devices and Systems
Computer architecture
Microprocessors
Phase change materials
Resistance heating
Resistance
Optimization
Language
ISSN
0163-1918
2156-017X
Abstract
We reported here a comparative study of PCM cell architectures. The developed architectures are considered in a program/read efficiency framework and in an integration context. The Self-Heating approach is slightly more efficient, owing to heat generation happening directly within GST, but shows hazardous technology implementation with Ge 2 Sb 2 Te 5 , due to high aspect ratios. The heater-based Wall architecture represents the best and easiest solution for PCM from the technology standpoint: it features relaxed aspect ratios and benefits from lots of geometry-based knobs for optimization with slightly higher process complexity and slightly lower efficiency. Strengths and drawbacks of the different architectures are schematically reported in Fig. 14.