학술논문

A Universal ZVT Design for a Family of Multiphase Interleaved High Step-Up Converters With Minimized Voltage Stress and Wide Operating Range
Document Type
Periodical
Source
IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 36(12):13779-13791 Dec, 2021
Subject
Power, Energy and Industry Applications
Aerospace
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Nuclear Engineering
Signal Processing and Analysis
Transportation
Switches
Semiconductor diodes
Inductors
Zero voltage switching
Zero current switching
Stress
Topology
High voltage gain
interleaved input
voltage multiplier cell (VMC)
zero-current switching (ZCS)
zero-voltage switching (ZVS)
zero-voltage transition (ZVT)
Language
ISSN
0885-8993
1941-0107
Abstract
Multiphase interleaved boost diode-capacitor (MIBD) converters, as the combination of multiphase interleaved input and voltage multiplier cells (VMCs), provide a preferred solution for both high voltage gain and high-efficiency application. This article proposes a universal zero-voltage transition (ZVT) circuit design method for a family of MIBD converters with different VMC structure and cell number. Compared with other soft-switching (SS) design methods, there is no extra voltage stress for all the semiconductor devices. An auxiliary circuit consisting of two low-voltage rating switches, two diodes, two capacitors, and one small inductor is integrated into the hard-switching (HS) two-phase interleaved boost diode-capacitor (TIBD) converters to provide zero-voltage switching (ZVS) turn-on and turn-off for the main switches and zero-current switching (ZCS) turn-off for all the diodes. Besides, the auxiliary switches turn on under ZCS. All the SS is accomplished within a wide duty cycle and power rating. From the comprehensive comparison, the constructed converters’ performance exceeds that of ZVS converters published in the recent literature. Furthermore, the extendable high voltage gain, low input current ripple, low voltage stress, and simple parameter design characteristics of HS MIBD converters are also conserved. Finally, a 320-W laboratory prototype is implemented to validate the theoretical analysis.