학술논문
Suppression of lateral transient enhanced dopant diffusion by nitrogen implantation and its application to fully depleted MOSFETs/SIMOX
Document Type
Conference
Author
Source
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Ion implantation technology Ion Implantation Technology Proceedings, 1998 International Conference on. 1:122-125 vol.1 1999
Subject
Language
Abstract
This paper confirms that nitrogen ion implantation is effective in suppressing the lateral transient enhanced diffusion (TED) of implanted impurity dopants during annealing and that the suppressed TED for highly doped source and drain regions provides the MOSFET/SIMOX with a controlled effective channel length.