부산대학교 도서관

The oxide thin-film transistors (TFTs) with low processing temperature and high-performance metrics exhibit great potentials in advanced displays and flexible electronics. The demands of high integration density and high flexibility drive the investigations on the downscaling behavior and mechanical stability of oxide TFTs. This work investigates the channel length (L) downscaling of self-aligned top-gate (SATG) oxide TFTs and explores the mechanical stress instabilities of flexible double-gate (DG) TFTs. By optimizing 4-nm AlO x gate insulator (GI) and modifying the channel/GI interface, the high performance is successfully maintained on sub-500 nm oxide TFTs. Furthermore, the study reveals the impacts of the laser lift-off (LLO) process and mechanical stress on the flexible oxide TFT. The DG structure and fluorine plasma treatment can noticeably enhance the mechanical robustness of flexible oxide TFTs.