학술논문
Integration of Gate Recessing and In Situ Cl− Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 38(1):91-94 Jan, 2017
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
This letter demonstrates an integration process of in situ Cl − doped Al 2 O 3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The Cl − doped Al 2 O 3 thin film is deposited by the ultrasonic spray pyrolysis deposition and characterized by transmission electron microscopy and X-ray photoelectron spectroscopy. The relative permittivity of Cl − doped Al 2 O 3 is higher than the pure Al 2 O 3 and the output current is enhanced. The threshold voltage of the enhancement mode AlGaN/GaN MOSHEMT with the Cl − doped Al 2 O 3 gate dielectric layer rose from 0.2 to 1.3 V. Furthermore, the breakdown voltage of present enhancement mode AlGaN/GaN MOSHEMT reached 650 V. It was also found that the MOSHEMT with Cl − doped Al 2 O 3 has higher gate leakage than that with pure Al 2 O 3 . The thermal stability of threshold voltage and current collapse phenomenon is described in this letter.