학술논문

Ferroelectric and ferroelastic domain wall motion in unconstrained Pb(Zr,Ti)O3 microtubes and thin films
Document Type
Periodical
Source
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control IEEE Trans. Ultrason., Ferroelect., Freq. Contr. Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on. 57(4):792-800 Apr, 2010
Subject
Fields, Waves and Electromagnetics
Ferroelectric materials
Dielectric substrates
Temperature distribution
Temperature dependence
Polarization
Mechanical factors
Electrodes
Ferroelectric films
Ferroelectric devices
Dielectric materials
Language
ISSN
0885-3010
1525-8955
Abstract
Ferroelectric polarization switching of high aspect ratio (>80:1) PbZr 0.52 Ti 0.48 O 3 (PZT) microtubes with a wall thickness of ~200 nm was investigated. A charge-based technique was used to assess the dielectric and ferroelectric properties of individual mechanically-unconstrained PZT microtubes with interdigitated electrodes. An enhancement in the degree of ferroelastic (non-180°) domain wall motion was observed in the tubes relative to films of similar thickness on rigid substrates. The dielectric response of the tubes showed a Rayleigh-like ac field dependence over a wide temperature range; the extent of the extrinsic contribution to the dielectric response dropped as the temperature approached 10K, but remained finite. This work demonstrates a general methodology for directly electrically addressing small, unconstrained ferroelectric devices, extending the range of driving fields and temperatures over which these materials can be probed.