학술논문
Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
Document Type
Periodical
Author
Dierickx, B.; Wouters, D.; Willems, G.; Alaerts, A.; Debusschere, I.; Simoen, E.; Vlummens, J.; Akimoto, H.; Claeys, C.; Maes, H.; Hermans, L.; Heijne, E.H.M.; Jarron, P.; Anghinolfi, F.; Campbell, M.; Pengg, F.X.; Aspell, P.; Bosisio, L.; Focardi, E.; Forti, F.; Kashigin, S.; Mekkaoui, A.; Habrard, M.C.; Sauvage, D.; Delpierre, P.
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 40(4):753-758 Aug, 1993
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
A new approach to monolithic pixel detectors, based on silicon on insulator (SOI) wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. The fabrication methods and the results of the electrical evaluation of the SOI-MOSFET devices and of the detector structures fabricated in the bulk are reported. The leakage current of the high-resistivity PIN-diodes is kept of the order of 5 to 10 nA/cm/sup 2/. The SOI preparation processes employed-SIMOX (separation by implantation of oxygen) and ZMR (zone melting recrystallization)-produce working electronic circuits, and appear to be compatible with the fabrication of detectors of suitable quality.ETX