학술논문
Graphene/PtSe2/Pyramid Si van Der Waals Schottky Junction for Room-Temperature Broadband Infrared Light Detection
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(11):6212-6216 Nov, 2022
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
Uncooled infrared (IR) photodetection has attracted increasing research interest due to its important applications in civil and military fields. Recently, platinum diselenide (PtSe 2 ), a newly discovered group-10 two-dimensional (2D) noble metal dichalcogenide (NMD) member, has emerged as an attractive candidate for highly sensitive IR photodetection due to its layer-dependent bandgap transition from semiconductor to semimetal, wide optical absorption, and high carrier mobility. Here, we demonstrate the successful assembly of PtSe 2 /pyramid Si mixed-dimensional van der Waals (vdW) Schottky junction with a graphene transparent electrode. Due to the novel vertical device structure with a graphene top contact, the photodetector achieves an appealing device performance, including an ultrabroadband response up to $10.6~\mu \text{m}$ , a high responsivity of 0.528 A/W, a large specific detectivity of ~1012 Jones, and a fast response time of $8.2~\mu \text{s}$ at zero bias voltage. More importantly, these findings have enabled the realization of an excellent room-temperature long-wave IR (LWIR) imaging capability and its utilization as an optical receiver in optical IR communication. Our work demonstrates a reliable approach to the construction of a high-performance Schottky junction device for room-temperature broadband IR photodetection.