학술논문

A 100 W high efficiency broadband Power Amplifier
Document Type
Conference
Source
2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT) Microwave and Millimeter Wave Technology (ICMMT), 2023 International Conference on. :1-3 May, 2023
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Signal Processing and Analysis
Power measurement
Broadband amplifiers
Impedance matching
Power amplifiers
HEMTs
Harmonic analysis
MODFETs
broadband power amplifier
matching networks
load-pull
100 W
Language
Abstract
In this paper, we investigate the design and practical implementation of a 100W broadband power amplifier (PA) with a bandwidth from 1GHz to 2.5GHz. An externally matched GaN high electron mobility transistor (HEMT) produced by CREE Company is selected. Power combining is used to combine the outputs of two individual power amplifiers. Optimum fundamental and harmonic load impedances are obtained using load-pull simulations for the active device across the design band. Through reasonable design of wideband output and input matching networks, From continuous wave large-signal measurements a maximum output power of greater than 100 W was obtained over an octave bandwidth.