부산대학교 도서관

SiC power devices offer a good chance to improve performance of impedance source converters; however, new challenges must be met. This paper presents a study on phenomena occurring due to parasitic capacitances of inductors in a high-frequency quasi-Z-source inverter. Rapid changes of voltage values caused by new, fast-switching SiC MOSFETs and Schottky diodes make this issue important. Negative influence of the parasitic capacitances on the quality of input current and on the amount of semiconductor switching losses is confirmed via precise Saber Sketch simulations and laboratory experiments with a 100-kHz/6-kVA model. Furthermore, simple methods of minimizing the parasitic capacitance values through means of isolation and winding techniques are discussed.