학술논문
Full reliability characterization of three-terminal SOT-MTJ devices and corresponding arrays
Document Type
Conference
Author
Source
2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-6 Mar, 2023
Subject
Language
ISSN
1938-1891
Abstract
We have systematically investigated the reliability performance of spin-orbit torque (SOT) magnetic random access memory (MRAM) devices, including electromigration (EM), stress migration (SM), endurance and data retention. The results show that the SOT-MRAM devices pass the EM requirement over 10 years lifetime under the operation condition, and pass the SM requirement over 1000 hours baking at 175°C. Moreover, high endurance close to 10 14 cycles and robust data retention over 10 years storage time were demonstrated for the same SOT-MRAM devices. This full characterization fills the blank of SOT-MRAM reliability research and would contribute to the commercialization of the SOT-MRAM.