부산대학교 도서관

In this work, an embedded RRAM array extending from 40/28nm logic to 12FFC FinFET technology is firstly demonstrated. Based on comprehensive reliability analysis on 28nm RRAM. we are able to identify the failure mode of 12FFC RRAM swiftly and address it through design solutions and write algorithm optimization. The physical origin of SET failure can be attributed to filament contraction and validated by 2D Monte-Carlo simulation. This finding provides a valuable insight on write algorithm innovation to achieve 10K endurance, more than 105°C/10yr retention, and 3x reflow capability, enabling next generation high-density embedded memory for industrial application.