학술논문
$3\mathrm{D} \text{Al}_{\mathrm{x}}\text{Ga}_{1-\mathrm{x}}\text{As}/\text{por}\text{-}\text{GaAs}/\text{GaAs}$ heterostructures for solar cells
Document Type
Conference
Author
Source
2022 IEEE 3rd KhPI Week on Advanced Technology (KhPIWeek) Advanced Technology (KhPIWeek), 2022 IEEE 3rd KhPI Week on. :1-6 Oct, 2022
Subject
Language
Abstract
We report the growth of $\mathbf{Al_{x}Ga_{1\text{-}x}As}$ layers on gallium arsenide. First, GaAs was electrochemically etched in a hydrochloric acid solution to form a porous layer. 'Desert Rose Stone’-like nanocrystallites $\mathbf{Al_{x}Ga_{1\text{-}x}As}$ of cubic syngony, consisting of $\mathbf{Al}_{0.71}\mathbf{Ga}_{0.29}\mathbf{As}$, AlAs, and GaAs, were grown on the surface of porous gallium arsenide by electrochemical deposition. The ability to grow 3D nanostructures on gallium arsenide with a low interfacial density has a major potential impact on the complex semiconductor industry for solar power.