학술논문
Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation
Document Type
Conference
Source
2023 35th International Conference on Microelectronic Test Structure (ICMTS) Microelectronic Test Structure (ICMTS), 2023 35th International Conference on. :1-4 Mar, 2023
Subject
Language
ISSN
2158-1029
Abstract
In GaN-based metal-insulatorsemiconductor high electron mobility transistors (GaNbased MIS HEMTs), Al2O3/Si3N4 bilayer-gate insulator- MIS HEMTs (Al2O3/Si3N4-MIS HEMTs) are considered to have the advantages of low gate leakage and low interface defects. This study will compare Si3N4 gate insulator-MIS HEMTs (Si3N4-MIS HEMTs) to discuss and clarify the abnormal deterioration mechanism of Al2O3/Si3N4-MIS HEMTs under Hot Carrier Effect (HCE). Therefore, in this study, the results of HCE between Si3N4-MIS HEMTs and Al2O3/Si3N4-MIS HEMTs are compared, and the abnormal HCS degradations in Al2O3/Si3N4-MIS HEMTs are discussed and explained in depth. A series of electrical and simulation analysis is conducted in order to verify the degradation mechanism model proposed in this study.