학술논문

Making Accurate and Consistent Wafer Measurements with Next Generation Guarded True-Kelvin MEMS DC Probes
Document Type
Conference
Source
2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS) Microelectronic Test Structures (ICMTS), 2024 IEEE 36th International Conference on. :1-5 Apr, 2024
Subject
Components, Circuits, Devices and Systems
General Topics for Engineers
Semiconductor device modeling
Micromechanical devices
Resistance
Performance evaluation
Force measurement
Production
Electrical resistance measurement
Device modeling
DC
CV
flicker noise
probe
MEMS probe
true-Kelvin probe
quasi-Kelvin probe
Kelvin
wafer measurements
contact resistance
Language
ISSN
2158-1029
Abstract
Gate length down-scaling of silicon-based transistor results in very small on-state drain-source resistance, making it challenging for test engineers to perform precise and repeatable wafer measurements. Size reduction of aluminum-capped copper test pads to save on lithography, prototyping and production costs implies that it is very difficult to re-probe the same device with low contact resistance. Novel true-Kelvin MEMS analytical DC probes, new test and modelling strategies are proposed in this paper to address these emerging test challenges.