학술논문
Making Accurate and Consistent Wafer Measurements with Next Generation Guarded True-Kelvin MEMS DC Probes
Document Type
Conference
Author
Sia, Choon Beng; Funatoko, Yoichi; Kunioka, Isao; Watanabe, Masanori; Andrews, Peter; Dawson, Ken; Sameshima, Masahiro; Saeki, Takao; Yang, John; Li, Jesse; Li, Xiaoyu; Guo, Siming; Fan, Li; Lim, Wei Meng; Wilcox, Eric; Lord, Anthony; Lastella, Sarah; Kawamata, Nobuhiro; Klattenhoff, Jens; Kister, Jarek; Losey, Matt; Slessor, Mike
Source
2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS) Microelectronic Test Structures (ICMTS), 2024 IEEE 36th International Conference on. :1-5 Apr, 2024
Subject
Language
ISSN
2158-1029
Abstract
Gate length down-scaling of silicon-based transistor results in very small on-state drain-source resistance, making it challenging for test engineers to perform precise and repeatable wafer measurements. Size reduction of aluminum-capped copper test pads to save on lithography, prototyping and production costs implies that it is very difficult to re-probe the same device with low contact resistance. Novel true-Kelvin MEMS analytical DC probes, new test and modelling strategies are proposed in this paper to address these emerging test challenges.