학술논문

Comparative Performance of 100–200 GHz Wideband Transceivers: CMOS vs Compound Semiconductors
Document Type
Conference
Source
2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2023 IEEE. :292-299 Oct, 2023
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Surveys
Transmitters
CMOS technology
Transceivers
Silicon
Sensors
Compounds
mm-Wave / sub-THz Transceiver in CMOS
SiGe
InP
GaN
FinFET
FD-SOI
140 GHz and 200 GHz Transceivers
Language
ISSN
2831-4999
Abstract
This paper provides a survey of silicon bulk CMOS, FD-SOI, SOI, and SiGe transceivers and compares their performance to compound semiconductor implementations in III-V technology nodes. A comparison of transistor level, block level, and complete transceiver level performance is presented to gauge the applicability of CMOS technology to these emerging higher frequency communication and sensing applications.