학술논문
In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process
Document Type
Conference
Author
Source
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on. :1-2 Apr, 2011
Subject
Language
ISSN
1524-766X
Abstract
Spacer-less In 0.7 Ga 0.3 As n-MOSFETs with self-aligned Ni-InGaAs contacts formed using a direct reaction between Ni and InGaAs were demonstrated. A novel salicide-like metallization process was developed to achieve self-aligned Ni-InGaAs contacts, comprising the steps of Ni reaction with In x Ga 1−x As and selective removal of excess Ni. Dopantless n-MOSFETs with metallic Ni-InGaAs source/drain (S/D) and n-MOSFETs with Si-doped S/D and Ni-InGaAs contacts were compared. Si implant performed before the metallization effectively suppressed the off-state current I OFF by more than 10 times.