학술논문
Ti- and Pt-based Schottky gates for InGaSb p-channel HFET development
Document Type
Conference
Author
Source
2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Indium Phosphide & Related Materials (IPRM), 2010 International Conference on. :1-4 May, 2010
Subject
Language
ISSN
1092-8669
Abstract
Antimonide-based heterostructural p-channel HFET epitaxies consisting of an In 0.44 Ga 0.56 Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy. The In 0.44 Ga 0.56 Sb channel layer was compressively strained to enhance hole mobility. Room-temperature Hall measurements to the as-grown materials exhibited a hole mobility as high as 895 cm 2 /V s. Ti/Pt/Au and Pt/Ti/Pt/Au metals were utilized in Schottky gate metallization processes for evaluating their effects on the device performance. Considering the diffusivity of Pt metals, the devices with as-deposited and annealed Pt-based gates were characterized simultaneously and compared with the ones with Ti-based gates. The devices with Ti-based gates yielded superior dc and rf performances to those with Pt-based gates.