부산대학교 도서관

A capacitance humidity sensor with a nitrogen-doped zinc oxide (N-doped ZnO) sensing film has been completed in this research. The N-doped ZnO material serves as a semiconductor sensing film with the Hall type of hole carriers (p-type). The carrier concentration and carrier mobility of p-type N-doped ZnO sensing films of capacitance humidity sensors without a polymer buffer layers are, respectively, 7.18 $\times 10^{{15}}$ cm $^{-{3}}$ and 3.69 $\times 10^{{2}}$ cm 2 / $\text{V}\,\cdot$ s. Besides, the carrier concentration and carrier mobility of p-type N-doped ZnO sensing films of capacitance humidity sensors with a polymer buffer layer are, respectively, $\vphantom {_{\int }}\,\,1.06\,\,\times 10^{{18}}$ cm $^{-{3}}$ and 3.34 $\times 10^{{2}}$ cm 2 / $\text{V}\,\cdot$ s. The electrical resistivity of sensing films without and with the buffer layer reaches 4 $\times 10^{{2}}$ and 8 $\times 10^{-{2}}\,\,\Omega $ -cm, respectively. In the measurements of the moisture adsorption and desorption processes, the dielectric constant of the capacitance humidity sensor without a buffer layer exhibits a capacitance effect of about 460 nF/m. The sensitivity of 45 pFm $^{-{1}}$ /%RH for the relative humidity measurement of N-doped ZnO sensing films at the upper electrode terminal of the capacitance humidity sensor with a polymer buffer layer is also obtained.