부산대학교 도서관

Active electronically scanned arrays (AESAs) are widely used in defense industry and telecommunications. Such systems have potential for development in the field of special and consumer electronics (GSM, Wi-Fi, WiMAX, LTE, fifth generation of mobile network communication technology, satellite navigation and communications). In contrast to passive phased arrays, AESA have additional sources of signal errors due to the presence of active transceiver modules in each channel of the array, the characteristics of which are different at each time due to the influence of destabilizing factors (temperature, change in supply voltages etc.). Thus, there is a need for a block of transceiver module parameters correction based on integrated temperature sensor. Simulation results of integrated temperature sensor designed in $0.18\ \mu \text{m}$ SiGe BiCMOS technology are presented. It provides temperature measurement in −60—85°C range with 5-bit resolution. Absolute error of measurements is less than 1°C. Power consumption of the sensor is less than 17 mW. Chip area is 0,018 mm 2 .