학술논문
Quantitative 3-D Model to Explain Large Single Trap Charge Variability in Vertical NAND Memory
Document Type
Conference
Author
Source
2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :32.1.1-32.1.4 Dec, 2019
Subject
Language
ISSN
2156-017X
Abstract
We present a TCAD model that reproduces large single trap V T -shifts (>100mV) in 3-D NAND flash read current by means of targeted charge placement based on linear response. With this model, we investigate worst-case V T -shifts in terms of bias conditions and junction position, showing low local carrier density at the origin of large shifts. We outline a sampling strategy that allows to reproduce experimental distributions for realistic grain size (12nm) and highlight the role of transconductance to explain anomalous large shifts.