학술논문
Wafer-level AuSn and CuSn bonding for MEMS encapsulation
Document Type
Conference
Author
Source
2013 Eurpoean Microelectronics Packaging Conference (EMPC) Microelectronics Packaging Conference (EMPC) , 2013 European. :1-5 Sep, 2013
Subject
Language
Abstract
In this work we have studied AuSn and CuSn Solid-Liquid Interdiffusion (SLID) bonding that can be used for wafer-level encapsulation. SLID bonding of these metal structures takes place at temperatures around 300°C but show higher re-melting temperatures because of the solid-liquid intermetallic phase transformation. 6″ silicon wafers were bonded with 60 ßm wide, electroplated, AuSn and CuSn seal ring structures. Wafer bonding temperature was varied between 300°C and 450°C, the used bonding force was 3.5 kN under the ambient pressure less than 1×10 −3 mbar. The bonding quality was evaluated with different seal ring metal structures and bonding parameters.