학술논문
Critical IGBT Design Regarding EMI and Switching Losses
Document Type
Conference
Author
Source
2008 20th International Symposium on Power Semiconductor Devices and IC's Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on. :185-188 May, 2008
Subject
Language
ISSN
1063-6854
1946-0201
1946-0201
Abstract
Critical N-base layer design in IGBT is discussed regarding Electro-Magnetic Interference (EMI) and switching losses during turn-off. The newly proposed criteria for oscillation and avalanche induced loss were given by a simple equation model and the validity of the model has been confirmed with experimental results. This paper shows an efficient design method of N-base for EMI-free IGBT with considering the turn-off loss. In addition, EMI reduction structure with partly buried N layer in N-base was proposed for break through the design limit of N-base.