학술논문

A semiconductor YBaCuO microbolometer for room temperature IR imaging
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 44(10):1795-1801 Oct, 1997
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Yttrium barium copper oxide
Infrared detectors
Radiation detectors
Semiconductivity
Temperature sensors
Geometry
Thermal sensors
Infrared sensors
Thermal conductivity
Substrates
Language
ISSN
0018-9383
1557-9646
Abstract
The characteristics of infrared (IR) microbolometer arrays utilizing semiconducting YBaCuO and operating at room temperature are presented. Surface-micromachined structures in the form of 1/spl times/10 arrays of pixel size 40 /spl mu/m/spl times/40 /spl mu/m and 60 /spl mu/m/spl times/60 /spl mu/m as well as single pixels of various geometries were constructed. Using the chopped radiation from a broad-band IR source, the responsivity R/sub V/ of the sensor was measured to be as high as 10/sup 4/ V/W and detectivity D* to be /spl sim/2/spl times/10/sup 7/ cm Hz/sup 1/2//W for a thermal conductance G/spl sim/10/sup -5/ W/K between the detector and the substrate. The spectral response was found to be uniform over a range of 1-12 /spl mu/m. Silicon micromachining and ambient-temperature processing were employed to ensure compatibility and, therefore, potential integration with CMOS-based signal processing circuitry. Methods of enhancing the figures of merit are discussed.